TiO_2体系电容-压敏复合功能陶瓷的结构与电学性能研究  

Structure and Electrical Properties of TiO_2 Based Capacitor-Varistor Ceramics

作　　者：宋朝文[1,2] 黄端平[2] 张枫 

机构地区：[1]中国船舶重工集团公司第七一二研究所,湖北武汉430064 [2]武汉理工大学材料科学与工程学院,湖北武汉430070

出　　处：《中国陶瓷工业》2013年第3期1-5,共5页China Ceramic Industry

摘　　要：研究烧结温度对TiO2体系复合功能陶瓷的晶体结构、显微结构、压敏性能、介电性能及晶粒和晶界特性的影响。研究结果表明,随着烧结温度的提高,TiO2体系陶瓷晶粒明显增加,第二相从Bi2Ti2O7向Bi4Ti3O12转变。烧结温度的提高引起TiO2体系陶瓷的相对介电常数εr的增加以及压敏电压V1mA、损耗角正切tgδ的明显降低。随烧结温度的提高,晶界电阻率ρgb、晶界势垒高度ФB、有效施主浓度Nd和界面态密度Nt趋于降低,晶粒电阻率ρg和耗尽层厚度Xd变化不大。Effects of sintering temperature on the crystal structure, microstructure and electric properties of TiO2 based capacitor-varistor multifunctional ceramics were investigated. The results indicate that the grain size of TiO2 based ceramics significantly increased with the sintering temperature elevating, while the second phase distributing at the grain-boundary transformed from Bi2Ti207 to Bi4Ti3012. Increasing sintering temperature led to an increment of the dielectric constant （st） together with a decrease of the varistor voltage （V1mA） and the dielectric loss （tgS） for TiO2 based ceramics. With the increasing sintering temperature, the electrical resistivity of the grain-boundary （pgb）, the height of potential barrier at the grain-boundary （qbs）, the effective donor concentration （Nd） within the grain and the interface state density （Nt） at the grain-boundary decreased. On the contrary, the electrical resistivity of the grain （pg） and the thickness of depletion layer at the grain-boundary （Xd） basically remained invariant.

关 键 词：TIO2 复合功能陶瓷 结构 压敏性能 介电性能 

分 类 号：TQ174.1[化学工程—陶瓷工业]