Ce,Tb:YAG单晶的生长及光谱性能  

Growth and Spectral Characteristics of Ce,Tb:YAG Luminescent Materials for White-LED

作　　者：刘炳峰[1] 向卫东[1] 刘海涛[1] 张志敏[1] 梁晓娟[1] 陈兆平[1] 赵斌宇[2] 

机构地区：[1]温州大学化学与材料工程学院,浙江温州325035 [2]同济大学材料科学与工程学院,上海201804

出　　处：《硅酸盐学报》2013年第9期1214-1219,共6页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金项目(51172165);浙江省自然科学基金重点项目(Z4110347);温州市科技局计划项目(G20090082)资助

摘　　要：采用提拉法生长了白光LED用的Ce和Tb共掺杂YAG(Ce,Tb:YAG)单晶。通过X射线粉末衍射分析了晶体样品的晶相结构,通过吸收光谱、激发和发射光谱对晶体的发光特性进行了表征。结果表明:所生长的单晶为立方晶相的YAG结构;在波长为460nm蓝光激发下,得到了发光中心位于546nm处的宽发射峰,较Ce:YAG单晶有明显的红移。同时,对不同厚度的晶体切片的光电参数进行了研究,发现厚度为0.5mm的晶体切片的光电参数最好。Ce,Tb：YAG single crystals for white LED（light-emitting diode） were grown by the Czochralski method. The crystal struc-ture was analyzed by X-ray powder diffraction, and their luminescence properties were characterized via the absorption, emission and excitation spectra. The results show that the as-prepared single crystal is a cubic structure of YAG. The emission peaks are a broad emission band that the center is located at 546 nm under the wavelength of 460 nm blue light excitation, appearing an obvious red-shift, compared to Ce：YAG single crystal. The photoelectrical parameters of crystal slices with different thicknesses were also investigated. It was indicated that the crystal slice with the thickness of 0.5 mm could have the superior photoelectrical parameters.

关 键 词：白光发光二级管 铈和铽共掺钇铝石榴石晶体 晶体生长 光谱性能 

分 类 号：O482.3[理学—固体物理]