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作 者:姚瑶[1] 叶建水[1] 董建新[1] 姚志浩[1] 张麦仓[1] 国为民[2]
机构地区:[1]北京科技大学材料科学与工程学院,北京100083 [2]钢铁研究总院,北京100081
出 处:《金属学报》2013年第9期1041-1050,共10页Acta Metallurgica Sinica
基 金:国家重点基础研究发展计划资助项目2010CB631200~~
摘 要:建立了热等静压扩散连接的数学模型,利用DICTRA软件与Thermal-Calc软件相结合的方法计算了不同温度、不同时间热等静压扩散连接界面反应层元素的互扩散规律与相分布情况,并根据计算结果给出了建议的扩散连接工艺范围,为工艺参数的设计提供了理论依据.计算结果表明:与时间相比,温度对扩散连接界面的元素扩散影响更大.针对DD407/FGH95合金系,扩散连接温度应选择在1120—1210℃的温度区间内.综合考虑扩散连接的元素互扩散区宽度及界面元素富集情况,1120℃时扩散连接的合理扩散时间为3—5 h,1170和1210℃时扩散连接的合理扩散时间为1—3 h.Turbine platform and blade are two main parts of aero engines and gas turbines. Due to different requirements in practice, platforms are always fabricated by single crystal superalloys, which have high temperature strength and resistance to hot corrosion and oxidation. The platforms employed at relatively lower temperatures can be made of powder superalloys. Therefore there is a great demand for bonding single crystal superalloys to powder superalloys. Because of high content of γ' forming elements, traditional fusion welding methods employed in bonding the two materials are high susceptibility to cracking. Hot isostatic pressure (HIP) bonding is a preferable technique now to join nickel base superalloys. However, using experimental methods to explore appropriate HIP bonding parameters is time consuming and costly. This work puts forward a calculated method to simulate diffusion process and phase distribution of diffusion couples obtained by HIP diffusion bonding. In this work, the numerical model of HIP diffusion bonding was built, and distribution of elements and phases of DD407/FGH95 diffusion couples under different HIP temperature and bonding time were calculated with DICTRA and Thermal-Calc software. The simulated results indicated that the appropriate HIP temperature should be chosen between 1120 γ'and 1210 γ'in DD407 and FGH95 kept initial concentration under 1120 E HIP bonding. γ'in FGH95 began to entirely solute and γ' in DD407 partly solute under 1170 ℃ HIP bonding, and under 1210 γ' HIP bonding, γ' in DD407 could solute completely near the interface and partly solute away from the interface. The simulated results also implied that appropriate time for 1120 ℃ HIP bonding is 3--5 h, 1--3 h for 1170 and 1210 I-3 HIP bonding.
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