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作 者:于晓磊[1] 杨军[1] 冯雪娇[1] 高鹏飞[1] 王久林[1] 努丽燕娜[1]
出 处:《无机材料学报》2013年第9期937-942,共6页Journal of Inorganic Materials
摘 要:以介孔二氧化硅SBA-15为硅源,采用镁热还原法和化学气相沉积(CVD)法合成了具有莲藕状结构的多孔硅/碳复合材料。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和氮气吸脱附法研究了原料配比,混压方式以及反应温度对多孔硅物相组成和结构形貌的影响。多孔硅的最佳合成条件为:镁粉过量20wt%,原料经球磨混合均匀后直接在750℃下高温反应4 h。对多孔硅及多孔硅/碳材料进行了电化学性能测试,在0.5 A/g电流密度下循环70次后仍保持1633.1 mAh/g的可逆容量,并且在8 A/g下容量达到580.1 mAh/g,表现出优异的循环稳定性以及倍率性能。Lotus root-like porous silicon / carbon composite was synthesized via magnesiothermic reduction and chemical vapor deposition (CVD) method, using mesoporous silica SBA-15 as silicon source. X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and nitrogen adsorption-desorption measurements were used to study the effects of the raw material ratio, mixing-pressing method and reaction tempera- ture on the phase composition and morphology of the lotus root-like porous silicon. The optimal synthesis condition of porous silicon is that the uniformly mixed precursors with the excess amount of 20wt% Mg powder after ball-milling are directly reacted at 750 ℃ for 4 h. The electrochemical tests reveal the porous silicon/carbon composite material maintains the reversible capacity of 1633.1 mAh/g at a current density of 0.5 A/g after 70 charge-discharge cycles, and attains 580.1 mAh/g even at 8 A/g.
分 类 号:TM911[电气工程—电力电子与电力传动] O613[理学—无机化学]
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