AlN/FeCoSiB磁电复合薄膜的制备及其逆磁电效应研究  

Preparation and Converse Magnetoelectric Effect of AlN/FeCoSiB Magnetoelectric Composite Films

作　　者：童贝[1] 杨晓非[1] 林更琪[1] 陈实[1] 欧阳君[1] 

机构地区：[1]华中科技大学光学与电子信息学院,武汉430074

出　　处：《无机材料学报》2013年第9期982-986,共5页Journal of Inorganic Materials

基　　金：国家自然科学基金(51172080)~~

摘　　要：借助射频磁控溅射成功制备了AlN/FeCoSiB磁电复合薄膜,探讨了退火条件对AlN薄膜压电性能和FeCoSiB薄膜磁性能的影响,并研究了其逆磁电响应。结果显示,500℃退火处理的AlN薄膜具有高度(002)择优取向和柱状生长结构;经过300℃退火后FeCoSiB薄膜的磁场灵敏度提高。该磁电复合薄膜的逆磁电电压系数(αCME)在偏置磁场(Hdc)为875 A/m时达到最大值62.5 A/(m·V);且磁感应强度(B)随交变电压(Vac)的变化呈现优异的线性响应(线性度达到1.3%)。这种AlN/FeCoSiB磁电复合薄膜在磁场或电场探测领域具有广阔的应用前景。AlN/FeCoSiB magnetoelectric （ME） composite films were prepared by RF magnetron sputtering suc- cessfully. The influences of annealing on piezoelectric property of AlN film and magnetic property of FeCoSiB film were discussed. The converse magnetoelectric （CME） response was investigated in detail. The results demonstrate that after annealing at 500 ℃, the A1N film possesses the highly （002） preferred orientation and typical columnar microstructure. Pronounced magnetic field sensitivity of FeCoSiB film is improved greatly through annealing at 300 ℃. The CME coefficient （αCME） reaches the maximum of 62.5 A/（m.V） at the bias magnetic field （Hdc） of 875 A/m. In addition, the magnetic induction （B） has an excellent linear relationship to the driven AC voltage （Vat） （Linearity of 1.3%）. These make the AlN/FeCoSiB ME composite films exhibit promising potential in magnetic and electric field detecting application.

关 键 词：射频磁控溅射 复合薄膜 退火 逆磁电 

分 类 号：TQ174[化学工程—陶瓷工业]