CMOS运算放大器内部电路电离辐射损伤研究测试系统  

A measurement System to detect the radiation damage inside CMOS operational amplifier

作　　者：郭旗[1] 陆妩[1] 任迪远[1] 余学锋[1] 张国强[1] 范隆[1] 严荣良[1] 

机构地区：[1]中国科学院新疆物理研究所,乌鲁木齐830011

出　　处：《核技术》2000年第9期637-641,共5页Nuclear Techniques

摘　　要：为了从内部研究ＣＭＯＳ运算放大器的电离辐射损伤机理，用由计算机控制的运算放大器内部单元电路损伤试验测试系统测量运放电路整体性能参数在电离辐射环境中的变化，观察电路内部各功能单元电路和ＭＯＳＦＥＴ的辐照损伤特性；该系统能将不同功能单元电路的损伤对电路整体性能的影响进行测试。A measurement system to detect the radiation damage inside CMOS operational amplifier was described in this paper. This system can observe the damage of functional sub-circuits in an operational amplifer while measuring the response of its characteristics, furthermore the various influence of the damage of each functional sub-circuits on the degradation of the whole circuit can be investigated using this system.

关 键 词：运算放大器 电离辐射损伤 测试 CMOS数字电路 

分 类 号：TN722.77[电子电信—电路与系统]