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出 处:《复旦学报(自然科学版)》2000年第4期427-431,共5页Journal of Fudan University:Natural Science
基 金:国家自然科学基金资助项目!(2 98730 13)
摘 要:用伏安法研究在 4.5mol·dm-3 H2 SO4 溶液中的Pb Ce(x(Ce) =1% )合金上生长的阳极膜 ,并与Pb Sb(x(Sb) =7% )和Pb Ca Sn(x(Ca) =0 .5 % ,x(Sn) =1.5 )两常用板栅合金的作比较 .实验结果表明 ,Pb Ce合金上生长的α PbO2 和Pb(Ⅱ )氧化物的生长速率均显著低于Pb Ca Sn的 ,但高于Pb Sb ,也即Pb Ce的耐腐蚀性优于Pb Ca Sn ,但不及Pb Sb .Using voltammetry, the anodic film formed in 4.5 mol·dm -3 H 2SO 4(20 ℃) on Pb Ce( x (Ce)=1%) alloy was studied and compared with the measures on the common grid alloys, Pb Sb( x (Sb)=7%) and Pb Ca Sn( x (Ca)=0.5%, x (Sn)=1.5%). The experiment results show that the growth rate of the anodic α PbO 2 film as well as that of the anodic Pb(Ⅱ) oxides film on Pb Ce is significantly lower than that on Pb Ca Sn, but higher than that on Pb Sb. Hence, the anti corrosion property of Pb Ce is better than that of Pb Ca Sn, but not as good as that of Pb Sb.
分 类 号:TM912.1[电气工程—电力电子与电力传动]
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