Ion-Banana-Orbit-Width Efect on Bootstrap Current for Small Magnetic Islands  

作　　者：曲洪鹏 

机构地区：[1]Southwestern Institute of Physics

出　　处：《Plasma Science and Technology》2013年第9期852-856,共5页等离子体科学和技术（英文版）

基　　金：supported by the National Magnetic Confinement Fusion Science Program of China(Nos.2011GB105002 and 2010GB106006);National Natural Science Foundation of China(No.11175057)

摘　　要：A simple and direct theoretical method has been proposed to investigate the so- called ion-banana-orbit-width （IBW） effect on the bootstrap current in the region of magnetic islands generated by the neoclassical tearing mode （NTM）. The result shows that, when the IBW approaches the island width, the （ion） bootstrap current can be partly restored inside the island while the pressure profile is flattened. This can lead to the reduction of the bootstrap current drive on the NTM. The strength of the IBW effect on the NTM is related to the safety factor and the inverse aspect ratio on the rational surface.A simple and direct theoretical method has been proposed to investigate the so- called ion-banana-orbit-width （IBW） effect on the bootstrap current in the region of magnetic islands generated by the neoclassical tearing mode （NTM）. The result shows that, when the IBW approaches the island width, the （ion） bootstrap current can be partly restored inside the island while the pressure profile is flattened. This can lead to the reduction of the bootstrap current drive on the NTM. The strength of the IBW effect on the NTM is related to the safety factor and the inverse aspect ratio on the rational surface.

关 键 词：NTM bootstrap current ion-banana-orbit-width magnetic island 

分 类 号：TL631.24[核科学技术—核技术及应用] TL65