基于ZnO/SiNWs异质结阵列的电容式湿度传感器  

A Capacitive Humidity Sensor Based on ZnO/SiNWs Heterojunction Arrays

作　　者：郑小东[1] 于江江[1] 王志亮[2] 张健[1] 

机构地区：[1]华东师范大学信息科学技术学院,上海200241 [2]南通大学电子信息学院,江苏南通226019

出　　处：《南通大学学报（自然科学版）》2013年第2期1-5,共5页Journal of Nantong University(Natural Science Edition)　

基　　金：国家自然科学基金项目(61076070);南通市科技应用研究计划项目(BK2012044)

摘　　要：采用湿法化学刻蚀方法制备硅纳米线(SiNWs),对其进行快速热退火处理,利用水浴法在SiNWs表面生长氧化锌(ZnO)纳米线,制备了ZnO/SiNWs异质结湿度传感器.采用扫描电子显微镜(SEM)和X射线衍射仪(XRD)分析了ZnO/SiNWs异质结的表面形貌和结构.测试了ZnO/SiNWs异质结湿度传感器不同湿度环境的电容响应,分析了它的工作机制.测试结果表明:传感器具有相对较大的灵敏度,较短的响应时间,较好的重复性、湿滞特性和稳定性,从而说明ZnO/SiNWs异质结在湿敏领域有很好的应用前景.The silicon nanowires（SiNWs） and ZnO were prepared by using wet chemical etching and chemical bath deposition method（CBD） respectively.ZnO/SiNWs heterojunction was fabricated as capacitive humidity sensor.The morphology and structure of the ZnO/SiNWs nanocomposites were characterized by Scanning Electron Microsopy（SEM） and X-ray diffraction.Sensing experiments were examined by measuring the capacitance response of ZnO/ SiNWs sensor which was put into different humidity environments.The results demonstrats that the humidity sensor exhibits high sensitivity and fast response time.Therefore,ZnO/SiNWs sensors are potential materials for high performance humidity sensor.

关 键 词：ZNO SiNWs异质结 阵列 化学刻蚀法 水浴法 电容湿度传感器 

分 类 号：TP212.2[自动化与计算机技术—检测技术与自动化装置]