背入射Au／TiO2／Au肖特基结紫外探测器  

Back Incident Au/TiO_2/Au Schottky Junction Ultraviolet Detector

作　　者：刘国华[1] 谷学汇[1] 李海龙[1] 郭文滨[1] 张歆东 

机构地区：[1]吉林大学集成光电子国家重点实验室 [2]电子科学与工程学院,长春130012

出　　处：《高等学校化学学报》2013年第9期2034-2036,共3页Chemical Journal of Chinese Universities

基　　金：国家自然科学基金(批准号:61006013)资助

摘　　要：TiO2作为一种宽禁带（3．0～3．2eV）半导体材料，由于具有优异的物理化学特性和独特的光电特性，在许多领域都展现出广泛的应用前景．Rutile phase TiO2 nanowire arrays were prepared on F： SnO2 （FTO） substrate via a low temperature hydrothermal method and characterized by means of X-ray diffraction （XRD） and scanning electron microscopy（SEM）. Then back incident ultraviolet photodetectors of Au/TiO2/Au structure were fabricated by traditional photo-lithography technique and magnetron sputter plating. At 2. 0 V bias, a very low dark current of 3.5 nA is achieved due to the back-to-back structure of the device. Under the irradiation of 360 nm UV-light, the photocurrent can reach 704 nA. The maximum responsibility is up to 0. 162 A/W at 360 nm, corresponding to a quantum efficiency of 56. 2%.

关 键 词：紫外探测器 TiO2纳米线阵列 水热法 肖特基结 

分 类 号：O614.41[理学—无机化学] O646[理学—化学]