The impact of polishing on germanium-on-insulator substrates  

作　　者：林旺 阮育娇 陈松岩 李成 赖虹凯 黄巍 

机构地区：[1]Department of Physics,Semiconductor Photonics Research Center,Xiamen University

出　　处：《Journal of Semiconductors》2013年第8期38-42,共5页半导体学报（英文版）

基　　金：supported by the Key Program of the National Natural Science Foundation of China(Nos.61176050,61036003,61176092, 60837001;the Fundamental Research Funds for Fujian Province of China(No.2012H0038);the National Basic Research Program of China (Nos.2012CB933503,2013CB632103);the Fundamental Research Funds for the Central Universities,China(No.2010121056)

摘　　要：We prepared germanium-on-insulator（GOI） substrates by using Smart-CutTM and wafer bonding technology. The fabricated GOI is appropriate for polishing due to a strong bonding strength（2.4 MPa） and a sufficient bonding quality.We investigated mechanical polishing and chemical-mechanical polishing（CMP） systematically, and an appropriate polishing method—mechanical polishing combined with CMP-is obtained.As shown by AFM measurement,the RMS of GOI after polishing decreased to 0.543 nm.And the Ge peak profile of the XRD curve became symmetric,and the FWHM is about 121.7 arcsec,demonstrating a good crystal quality.We prepared germanium-on-insulator（GOI） substrates by using Smart-CutTM and wafer bonding technology. The fabricated GOI is appropriate for polishing due to a strong bonding strength（2.4 MPa） and a sufficient bonding quality.We investigated mechanical polishing and chemical-mechanical polishing（CMP） systematically, and an appropriate polishing method—mechanical polishing combined with CMP-is obtained.As shown by AFM measurement,the RMS of GOI after polishing decreased to 0.543 nm.And the Ge peak profile of the XRD curve became symmetric,and the FWHM is about 121.7 arcsec,demonstrating a good crystal quality.

关 键 词：germanium-on-insulator wafer bonding mechanical polishing chemical-mechanical polishing 

分 类 号：TN305.2[电子电信—物理电子学]