Stability analysis of a back-gate graphene transistor in air environment  

作　　者：贾昆鹏 杨杰 粟雅娟 聂鹏飞 钟健 梁擎擎 朱慧珑 

机构地区：[1]Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2013年第8期61-64,共4页半导体学报（英文版）

基　　金：supported by the National Sciences and Technology Major Project 02

摘　　要：The stability of a graphene field effect transistor（GFET） is important to its performance optimization, and study of hysteresis behavior can propose useful suggestions for GFET fabrication and optimization.In this work,a back-gate GFET has been fabricated and characterized,which is compatible with the CMOS process.The stability of a GFET in air has been studied and it is found that a GFET＇s electrical performance dramatically changes when exposed to air.The hysteresis characteristic of a GFET depending on time has been observed and analyzed systematically.Hysteresis behavior is reversed at room temperature with the Dirac point positive shifted when the GFET is exposed to air after annealing.The stability of a graphene field effect transistor（GFET） is important to its performance optimization, and study of hysteresis behavior can propose useful suggestions for GFET fabrication and optimization.In this work,a back-gate GFET has been fabricated and characterized,which is compatible with the CMOS process.The stability of a GFET in air has been studied and it is found that a GFET＇s electrical performance dramatically changes when exposed to air.The hysteresis characteristic of a GFET depending on time has been observed and analyzed systematically.Hysteresis behavior is reversed at room temperature with the Dirac point positive shifted when the GFET is exposed to air after annealing.

关 键 词：graphene FET stability back-gate hysteresis 

分 类 号：TN325[电子电信—物理电子学]