Modulation of the effective work function of TiN metal gate for PMOS application  

作　　者：韩锴 马雪丽 杨红 王文武 

机构地区：[1]Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2013年第8期193-196,共4页半导体学报（英文版）

基　　金：supported by the Important National Science & Technology Specific Projects,China(No.2009ZX02035);the National Natural Science Foundation of China(Nos.61176091,50932001)

摘　　要：It is important to find a way to modulate the work function of TiN metal gate towards the valence band edge of Si,which can meet the lower threshold voltage requirement of p-type metal-oxide-semiconductor（MOS） transistor.In this work,effects of TiN thickness,post-deposition annealing（PDA）,oxygen incorporation and N concentration variation on the work function of TiN metal gate in MOS structures are systematically investigated. It can be found that the work function positively shifts at the initial stage as the thickness of the TiN layer increases and stabilizes at such a thickness.PDA at N_2 ambience with a trace of O_2 can also cause a positive shift in the work function of TiN metal gate.The same tendency can be observed when oxygen is incorporated into TiN.Finally, increasing the N concentration in TiN can also positively shift the work function.All these measures are effective in modulating the TiN metal gate so that it is more suitable for PMOS application.It is important to find a way to modulate the work function of TiN metal gate towards the valence band edge of Si,which can meet the lower threshold voltage requirement of p-type metal-oxide-semiconductor（MOS） transistor.In this work,effects of TiN thickness,post-deposition annealing（PDA）,oxygen incorporation and N concentration variation on the work function of TiN metal gate in MOS structures are systematically investigated. It can be found that the work function positively shifts at the initial stage as the thickness of the TiN layer increases and stabilizes at such a thickness.PDA at N_2 ambience with a trace of O_2 can also cause a positive shift in the work function of TiN metal gate.The same tendency can be observed when oxygen is incorporated into TiN.Finally, increasing the N concentration in TiN can also positively shift the work function.All these measures are effective in modulating the TiN metal gate so that it is more suitable for PMOS application.

关 键 词：work function modulation PMOS positive shift 

分 类 号：TN386.1[电子电信—物理电子学]