大尺寸蓝宝石单晶的制备方法研究进展  

Research Progress of Preparation Methods of Large-size Sapphire Crystal

作　　者：张晓军[1] 周新民[1] 

机构地区：[1]西南林业大学,云南昆明650224

出　　处：《绿色科技》2013年第8期273-275,共3页Journal of Green Science and Technology

摘　　要：简述了两种大尺寸蓝宝石单晶的制备方法,即泡生法和冷心放肩微量提拉法。对于泡生法制备蓝宝石晶体,主要介绍了该方法的基本原理和优缺点。对冷心放肩微量提拉法在泡生法和提拉法的基础上进行了一系列的改进,极大地缩短了晶体生长周期并提高了材料综合利用率,但冷心放肩微量提拉法也存在一些缺陷。因此,指出原有方法的改进和新方法的研究仍然是晶体研究者工作的重点。This article introduces two preparation methods of large-- size sapphire crystal, i.e. GOI method and Sapphire growth technique with micro--pulling and shoulder expanding at cooled center （SAPMAC） method. And it mainly introduces the basic principles and the advantages and disadvantages of GOI method. As for SAPMAC method, it has a series o{ improvements based on GOI and Czochralski method, and greatly shortens the cycle of crystal growth and improves the comprehensive utilization rate of material. Besides, the SAPMAC method still has some defects, therefore, the improvements of the original method and research of new methods are still the focus work of the crystal investigator.

关 键 词：泡生法 冷心放肩微量提拉法 蓝宝石 

分 类 号：TN304[电子电信—物理电子学]