FFEA中电场及电子轨迹模拟研究  被引量:2

Investigating on the Simulating Field and Trace of Electron in FFEA

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作  者:屈晓声[1] 李得杰[1] 郑崇伟[2] 姚保纶 

机构地区:[1]清华大学电子工程系,北京100084 [2]温州师范学院物理系,浙江温州325003

出  处:《光电子.激光》2000年第5期500-502,共3页Journal of Optoelectronics·Laser

摘  要:采用有限差分法 ,对有聚焦极的垂直双门结构的 FEA进行了轴对称三维模拟计算 ,得到发射微尖附近的电位和电子束运动分布图。分别讨论了聚焦极电位、聚焦孔以及栅极电位对发射的电子束影响。聚焦电位相对栅极越负 ,聚焦作用越强。减小聚焦孔径影响了大的发散角的电子 ,但对聚焦的作用不如电位改变明显。栅极电位基本不影响电子的轨迹 ,仅改变了发射的电子的多少。结论与实验基本一致。A distribution graph of electronic pot ential and track near microtip in FFEA was obtained by finite difference simulat ing three dimensions texture of double gate FFEA.It is clearly a result that ele ctrons focusing effect becomes stronger as the focus electrode bias decreases to w ard the tip potential.If negative electrode bias,we may affirm that almost all e lectrons are repelled by the electronic lens and finally return to the grid elec trode.The potential of grid electrode almost dose not affect on the track of ele c trons from microtip by the quantum tunneling effect,which can only increase elec tronic amount as voltage based grid become more higher.The electrons being of bi gger shooting angle will be embarrassed as diameter of focus electrode reduce.

关 键 词:场致发射阵列 电子运动轨迹 有限差分法 

分 类 号:O482.31[理学—固体物理]

 

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