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作 者:梁建[1,2] 王晓斌[1,2] 张艳[1,2] 董海亮[1,2] 刘海瑞[1,2] 许并社[1,2]
机构地区:[1]太原理工大学新材料界面科学与工程教育部重点实验室,太原030024 [2]山西省新材料工程技术研究中心,太原030024
出 处:《人工晶体学报》2013年第8期1531-1536,共6页Journal of Synthetic Crystals
基 金:长江学者和创新团队资助项目(IRT0972);国家自然科学基金(51002102);山西省自然科学基金(2011011022-1;20120110467);山西省研究生优秀创新项目(20113033)
摘 要:本文用快速微波水热加煅烧的工艺制备了不同Dy3+掺杂浓度的棒状β-Ga2O3∶Dy3+蓝/黄荧光粉。XRD和SEM分析表明Dy3+的掺入使样品的结晶度降低但未对其形貌产生影响。光致发光测试结果表明,β-Ga2O3∶Dy3+的发射峰位于492 nm和580 nm;并且随着Dy3+掺杂量的变化,样品的发射峰强度和蓝光/黄光发射强度比例发生了变化;在Dy3+掺杂量为3mol%时,样品的发射强度达到最大值,蓝光/黄光发射强度比例为59.29%/40.71%。另外,简要分析了GaOOH的生长机理和Dy3+在GaOOH∶Dy3+及β-Ga2O3∶Dy3+中的掺杂机理。Rod-like β-Ga2O3:Dy3+ blue/yellow phosphors doped with different concentration of Dy3+ were synthesized by the rapid microwave hydrothermal and calcination method. Although the crystallization of β-Ga2O3:Dy3+ samples decreased as the Dy3+ concentration increasing, the samples'morphology maintained and were not influeneed by the Dy3+ concentration under XRD and SEM characterizations. Photol measurement results showed that the emission peaks of β-Ga2O3:Dy3+ phosphors located at 492 nm (blue) and 580 nm ( yellow), the intensity of blue/yellow emission varied with Dy3+ concentrations and showed a maximum when the concentration of Dy3+ at 3mo1%, the corresponding blue/ yellow ratio was 59.29%/40. 71%. In addition, the probable mechanisms of GaOOH growth and Dy3+ doping into GaOOH: Dy3+ and β-Ga2O3:Dy3+ were analyzed briefly.
关 键 词:微波水热法 β-Ga2O3∶Dy3+ 光致发光
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