Strain effects on performance of electroabsorption optical modulators  

作　　者：Kambiz ABEDI 

机构地区：[1]Department of Electrical Engineering, Faculty of Electrical and Computer Engineering, Shahid Beheshti University, Tehran 1983963113, lran

出　　处：《Frontiers of Optoelectronics》2013年第3期282-289,共8页光电子前沿（英文版）

摘　　要：This paper reports a detailed theoretical investigation of strain effects on the performance of electroabsorption optical modulators based on the asym- metric intra-step-barrier coupled double strained quantum wells （AICD-SQWs） active layer. For this purpose, the electroabsorption coefficient was calculated over a range of AICD-SQWs strain from compressive to tensile strain. Then, the extinction ratio （ER） and insertion loss parameters were evaluated from calculated electroabsorp- tion coefficient for transverse electric （TE） input light polarization. The results of the simulation suggest that the tensile strain from 0.05% to 0.2% strain in the wide quantum well has a significant impact on the ER and insertion loss as compared with compressive strain, whereas the compressive strain of the narrow quantum well from -0.5% to -0.7% strain has a more pronounced impact on the improvement of the ER and insertion loss as compared with tensile strain.This paper reports a detailed theoretical investigation of strain effects on the performance of electroabsorption optical modulators based on the asym- metric intra-step-barrier coupled double strained quantum wells （AICD-SQWs） active layer. For this purpose, the electroabsorption coefficient was calculated over a range of AICD-SQWs strain from compressive to tensile strain. Then, the extinction ratio （ER） and insertion loss parameters were evaluated from calculated electroabsorp- tion coefficient for transverse electric （TE） input light polarization. The results of the simulation suggest that the tensile strain from 0.05% to 0.2% strain in the wide quantum well has a significant impact on the ER and insertion loss as compared with compressive strain, whereas the compressive strain of the narrow quantum well from -0.5% to -0.7% strain has a more pronounced impact on the improvement of the ER and insertion loss as compared with tensile strain.

关 键 词：asymmetric intra-step-barrier coupled double strained quantum wells （AICD-SQWs） electroabsorption modulators strain insertion loss 

分 类 号：TN929.11[电子电信—通信与信息系统] TN248.4[电子电信—信息与通信工程]