Ground bounce noise reduction aware combinational multi threshold CMOS circuits for nanoscale CMOS multiplier  

作　　者：Bipin Kumar VERMA Shyam Babu SINGH Shyam AKASHE 

机构地区：[1]Department of Electronics and Communication Engineering, ITM University, Gwalior (M.P.) 474001, India

出　　处：《Frontiers of Optoelectronics》2013年第3期327-337,共11页光电子前沿（英文版）

摘　　要：Multi-threshold complementary metal-oxide- semiconductor （MTCMOS） is ofbn used to reduce the leakage current in idle circuit. Ground bounce noise produced during a transition mode （sleep-to-active） is an important challenge in MTCMOS. In this paper, various noise-aware combinational MTCMOS circuit was used to evaluate the ground bounce noise. An intermediate mode was applied in the sleep-to-active mode transition to reduce the charge stored on virtual lines to real ground. The dependence of ground bounce noise on voltage, transistor size and temperature was investigated with different MTCMOS circuit technique. The peak amplitude of ground bounce noise was reduced up to 78.82%. The leakage current of the circuit was decreased up to 99.73% and the active power of the circuit was reduced up to 62.32%. Simulation of multiplier with different MTCMOS circuit techniques was performed on 45nm CMOS technology.Multi-threshold complementary metal-oxide- semiconductor （MTCMOS） is ofbn used to reduce the leakage current in idle circuit. Ground bounce noise produced during a transition mode （sleep-to-active） is an important challenge in MTCMOS. In this paper, various noise-aware combinational MTCMOS circuit was used to evaluate the ground bounce noise. An intermediate mode was applied in the sleep-to-active mode transition to reduce the charge stored on virtual lines to real ground. The dependence of ground bounce noise on voltage, transistor size and temperature was investigated with different MTCMOS circuit technique. The peak amplitude of ground bounce noise was reduced up to 78.82%. The leakage current of the circuit was decreased up to 99.73% and the active power of the circuit was reduced up to 62.32%. Simulation of multiplier with different MTCMOS circuit techniques was performed on 45nm CMOS technology.

关 键 词：multi-threshold complementary metal-oxide-semiconductor （MTCMOS） mode transition groundbounce noise sleep transistor 

分 类 号：TN432[电子电信—微电子学与固体电子学] TP751.1[自动化与计算机技术—检测技术与自动化装置]