α-Si∶H摄象管靶的光谱响应和最佳靶厚  

PHOTORESPONSE AND OPTIMAL THICKNESS OF α-Si:H TARGET FOR VIDICON

作　　者：海宇涵[1] 

机构地区：[1]中国科学院电子学研究所

出　　处：《电子科学学刊》1991年第2期169-176,共8页

基　　金：国家自然科学基金

摘　　要：用动态系统测量了a-Si∶H靶电压对光谱响应的影响,发现对短波响应影响较大。推导了靶光电流i_r和饱和电压V_c的计算公式,发现V_1∞[(μ,τ)^(-1),ω~2]。从测量的V_r值,计算了μ_Dτ_D值。发现它随入照光波长的缩短而减小。估算了对单色光和对白光的最佳靶厚。The effect of the a-Si:H target voltage on the spectral photosensitivity is measured in a demountable apparatus with interchangeable targets. It is found that the effect of target voltage on the photoresponse increases when the light wavelength decreases. The target photocurrent is and saturation voltage Vs are analysed. It is shown that Vs ∝[(μpτp)-1, w2]. μpτp is calculated from measured V, value. It is found that μpτp value decreases when the light wavelength decreases. The optimal thicknesses of a-Si:H targets for homogen-eous light and achromatic light are estimated.

关 键 词：非晶硅 摄象管靶 光谱响应 靶厚 

分 类 号：TN142[电子电信—物理电子学]