双向负阻晶体管动态伏安特性的实验研究  

STUDY ON THE DYNAMIC I-V CHARACTERISTICS OF BNRT

作　　者：周旋[1] 高广和[2] 

机构地区：[1]中国科学院半导体研究所 [2]华北电力学院研究生院

出　　处：《电子科学学刊》1991年第3期327-331,共5页

摘　　要：本文研究了双向负阻晶体管(Bidirectional Negative Resistance Transistor,简称BNRT)在张弛振荡电路中的动态伏安特性。借助动态伏安特性对BNRT张弛振荡电路的一些性质进行了分析。实验结果与计算结果一致。本文还对改进器件结构的设计,以便使器件达到更高的振荡频率提供了理论依据。Experimental investigation was carried out for the dynamic I-V characteris-tics of the bidirectional negative resistance transistor (BNRT) in the relaxation oscillation circuit. Some properties of the BNRT relaxation oscillation circuit were also analysed by means of the dynamic I-V characteristics. Experimental results agree with the computations. The direction for improving the device design is also pointed out in order to enhance the oscillation frequency.

关 键 词：负阻晶体和 张弛振荡器 伏安特性 

分 类 号：TN321.2[电子电信—物理电子学]