Effect of temperature on the intensity and carrier lifetime of an AlGaAs based red light emitting diode  

作　　者：P.Dalapati N.B.Manik A.N.Basu 

机构地区：[1]Condensed Matter Physics Research Center,Department of Physics,Jadavpur University

出　　处：《Journal of Semiconductors》2013年第9期1-5,共5页半导体学报（英文版）

基　　金：the Defence Research Development Organization(DRDO),India

摘　　要：The influence of temperature on the intensity of light emitted by as well as the carrier life time r of a standard A1GaAs based light emitting diode has been investigated in the temperature range from 345 to 136 K. The open-circuit voltage decay （OCVD） technique has been used for measured the carrier lifetime. Our experimental results reveal a 16% average increase in intensity and a 163.482-19.765 ns variation in carrier lifetime in the above temperature range. Further, theoretical and experimental analysis show that for negligible carrier density the intensity is inversely proportional to carrier lifetime for this sample.The influence of temperature on the intensity of light emitted by as well as the carrier life time r of a standard A1GaAs based light emitting diode has been investigated in the temperature range from 345 to 136 K. The open-circuit voltage decay （OCVD） technique has been used for measured the carrier lifetime. Our experimental results reveal a 16% average increase in intensity and a 163.482-19.765 ns variation in carrier lifetime in the above temperature range. Further, theoretical and experimental analysis show that for negligible carrier density the intensity is inversely proportional to carrier lifetime for this sample.

关 键 词：LED low temperature INTENSITY ideality factor carrier lifetime 

分 类 号：TN312.8[电子电信—物理电子学]