Eliminating the floating-body effects in a novel CMOS-compatible thin-SOI LDMOS  

作　　者：蒋永恒 罗小蓉 李燕妃 王沛 范叶 周坤 王琦 胡夏融 张波 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China

出　　处：《Journal of Semiconductors》2013年第9期53-57,共5页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.61176069,60976060,51308020304)

摘　　要：A novel CMOS-compatible thin film SOI LDMOS with a novel body contact structure is proposed. It has a Si window and a P-body extended to the substrate through the Si window, thus, the P-body touches the P＋ region to form the body contact. Compared with the conventional floating body SOI LDMOS （FB SOI LDMOS） structure, the new structure increases the off-state BV by 54%, decreases the specific on resistance by 20%, improves the output characteristics significantly, and suppresses the self-heating effect. Furthermore, the advantages of the low leakage current and low output capacitance of SOI devices do not degrade.A novel CMOS-compatible thin film SOI LDMOS with a novel body contact structure is proposed. It has a Si window and a P-body extended to the substrate through the Si window, thus, the P-body touches the P＋ region to form the body contact. Compared with the conventional floating body SOI LDMOS （FB SOI LDMOS） structure, the new structure increases the off-state BV by 54%, decreases the specific on resistance by 20%, improves the output characteristics significantly, and suppresses the self-heating effect. Furthermore, the advantages of the low leakage current and low output capacitance of SOI devices do not degrade.

关 键 词：thin film SOI LDMOS body contact floating body effect parasitic BJT effect 

分 类 号：TN386.1[电子电信—物理电子学]