A sub-1-dB noise figure monolithic GNSS LNA  

作　　者：周仁杰 项勇 王虹 甘业兵 钱敏 马成炎 叶甜春 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences [2]Hangzhou Zhongke Microelectronics Co. Ltd. [3]Jiaxing Lianxing Microelectronics Co. Ltd.

出　　处：《Journal of Semiconductors》2013年第9期149-153,共5页半导体学报（英文版）

摘　　要：A monolithic integrated low noise amplifier （LNA） based on a SiGe H/3T process tbr a global nawgatlon satellite system （GNSS） is presented. An optimizing strategy of taking parasitic capacities at the input node into consideration is adopted and a method and design equations of monolithically designing the LC load and the output impedance matching circuit are introduced. The LNA simultaneously reaches excellent noise and input/output impedance matching. The measurement results show that the LNA gives an ultra-low noise figure of 0.97 dB, a power gain of 18.6 dB and a three-order input intermodulation point of -6 dBm at the frequency of 1.575 GHz. The chip consumes 5.4 mW from a 1.8 V source and occupies 600 x 650 μmz die area.A monolithic integrated low noise amplifier （LNA） based on a SiGe H/3T process tbr a global nawgatlon satellite system （GNSS） is presented. An optimizing strategy of taking parasitic capacities at the input node into consideration is adopted and a method and design equations of monolithically designing the LC load and the output impedance matching circuit are introduced. The LNA simultaneously reaches excellent noise and input/output impedance matching. The measurement results show that the LNA gives an ultra-low noise figure of 0.97 dB, a power gain of 18.6 dB and a three-order input intermodulation point of -6 dBm at the frequency of 1.575 GHz. The chip consumes 5.4 mW from a 1.8 V source and occupies 600 x 650 μmz die area.

关 键 词：LNA GNSS monolithic integrated SiGe HBT 

分 类 号：TN967.1[电子电信—信号与信息处理] TN722.3[电子电信—信息与通信工程]