Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates  

作　　者：黄立 徐文焱 阙炎德 毛金海 孟蕾 潘理达 李更 王业亮 杜世萱 刘云圻 高鸿钧 

机构地区：[1]Institute of Physics,Chinese Academy of Sciences [2]Institute of Chemistry,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2013年第9期54-62,共9页中国物理B（英文版）

基　　金：supported by the National Basic Research Program of China (Grant Nos. 2013CBA01600, 2011CB932700, 2009CB929103, and 2010CB923004);the National Natural Science Foundation of China, and the Chinese Acedemy of Sciences

摘　　要：Intercalations of metals and silicon between epitaxial graphene and its substrates are reviewed. For metal intercala- tion, seven different metals have been successfully intercalated at the interface of graphene/Ru（O001） and form different intercalated structures. Meanwhile, graphene maintains its original high quality after the intercalation and shows features of weakened interaction with the substrate. For silicon intercalation, two systems, graphene on Ru（O001） and on Ir（l I 1）, have been investigated. In both cases, graphene preserves its high quality and regains its original superlative properties after the silicon intercalation. More importantly, we demonstrate that thicker silicon layers can be intercalated at the interface, which allows the atomic control of the distance between graphene and the metal substrates. These results show the great potential of the intercalation method as a non-damaging approach to decouple epitaxial graphene from its substrates and even form a dielectric layer for future electronic applications.Intercalations of metals and silicon between epitaxial graphene and its substrates are reviewed. For metal intercala- tion, seven different metals have been successfully intercalated at the interface of graphene/Ru（O001） and form different intercalated structures. Meanwhile, graphene maintains its original high quality after the intercalation and shows features of weakened interaction with the substrate. For silicon intercalation, two systems, graphene on Ru（O001） and on Ir（l I 1）, have been investigated. In both cases, graphene preserves its high quality and regains its original superlative properties after the silicon intercalation. More importantly, we demonstrate that thicker silicon layers can be intercalated at the interface, which allows the atomic control of the distance between graphene and the metal substrates. These results show the great potential of the intercalation method as a non-damaging approach to decouple epitaxial graphene from its substrates and even form a dielectric layer for future electronic applications.

关 键 词：GRAPHENE metal intercalation silicon intercalation scanning tunneling microscopy 

分 类 号：TB383.1[一般工业技术—材料科学与工程]