High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers  

作　　者：徐云 王永宾 张宇 宋国峰 陈良惠 

机构地区：[1]Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2013年第9期439-441,共3页中国物理B（英文版）

基　　金：supported by the Beijing Natural Science Foundation, China (Grant No. 4112058)

摘　　要：A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 （72 A/cm^2 per quantum well）, and the slope efficiency was 0.2 W/A. The internal loss was 11 cm^-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 （72 A/cm^2 per quantum well）, and the slope efficiency was 0.2 W/A. The internal loss was 11 cm^-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.

关 键 词：Galn（As）Sb/AlGaAsSb diode lasers threshold current density output power 

分 类 号：TN248[电子电信—物理电子学]