In situ electrical resistance and activation energy of solid C_(60) under high pressure  

作　　者：杨洁 刘才龙 高春晓 

机构地区：[1]Fundamental Department,Aviation University of Airforce [2]State Key Laboratory of Superhard Materials,Institute of Atomic and Molecular Physics,Jilin University [3]College of Geoexploration Science and Technology,Jilin University

出　　处：《Chinese Physics B》2013年第9期516-519,共4页中国物理B（英文版）

基　　金：supported by the National Basic Research Program of China (Grant No. 2011CB808204);the National Natural Science Foundation of China (Grant Nos. 11074094 and 91014004);the Fundamental Research Funds for Jilin University, China (Grant No. 450060491500)

摘　　要：The in situ electrical resistance and transport activation energies of solid C60 fullerene have been measured under high pressure up to 25 GPa in the temperature range of 300-423 K by using a designed diamond anvil cell. In the experiment, four parts of boron-doped diamond films fabricated on one anvil were used as electrical measurement probes and a W-Ta thin film thermocouple which was integrated on the other diamond anvil was used to measure the temperature. The current results indicate that the measured high-pressure resistances are bigger than those reported before at the same pressure and there is no pressure-independent resistance increase before 8 GPa. From the temperature dependence of the resistivity, the C60 behaviors as a semiconductor and the activation energies of the cubic C60 fullerene are 0,49, 0.43, and 0.36 eV at 13, 15, and 19 GPa, respectively.The in situ electrical resistance and transport activation energies of solid C60 fullerene have been measured under high pressure up to 25 GPa in the temperature range of 300-423 K by using a designed diamond anvil cell. In the experiment, four parts of boron-doped diamond films fabricated on one anvil were used as electrical measurement probes and a W-Ta thin film thermocouple which was integrated on the other diamond anvil was used to measure the temperature. The current results indicate that the measured high-pressure resistances are bigger than those reported before at the same pressure and there is no pressure-independent resistance increase before 8 GPa. From the temperature dependence of the resistivity, the C60 behaviors as a semiconductor and the activation energies of the cubic C60 fullerene are 0,49, 0.43, and 0.36 eV at 13, 15, and 19 GPa, respectively.

关 键 词：high pressure electrical resistance activation energy C60 fullerene 

分 类 号：O521[理学—高压高温物理]