Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory  

作　　者：张楷亮 刘凯 王芳 尹富红 韦晓莹 赵金石 

机构地区：[1]School of Electronics Information Engineering,Tianjin Key Laboratory of Film Electronic & Communication Devices,Tianjin University of Technology [2]School of Electronics Information Engineering,Tianjin University

出　　处：《Chinese Physics B》2013年第9期554-558,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 61274113 and 11204212);the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-1064);the Natural Science Foundation of Tianjin City, China (Grant Nos. 10SYSYJC27700, 13JCYBJC15700, and 10ZCKFGX01200);the Science and Technology Development Funds of Universities and Colleges of Tianjin City, China (Grant No. 20100703)

摘　　要：We investigate the resistive switching characteristics of a Cu/VOx/W structure. The VOx film is deposited by radio- frequency magnetron sputtering on the Cu electrode as a dielectric layer. The prepared VOx sample structure shows reproducible bipolar resistive switching characteristics with ultra-low switching voltage and good cycling endurance. A modified physical model is proposed to elucidate the typical switching behavior of the vanadium oxide-based resistive switching memory with a sudden resistance transition, and the self-saturation of reset current as a function of compliance current is observed in the test, which is attributed to the conducting mechanism is discussed in detail. growth pattern of the conducting filaments. Additionally, the relatedWe investigate the resistive switching characteristics of a Cu/VOx/W structure. The VOx film is deposited by radio- frequency magnetron sputtering on the Cu electrode as a dielectric layer. The prepared VOx sample structure shows reproducible bipolar resistive switching characteristics with ultra-low switching voltage and good cycling endurance. A modified physical model is proposed to elucidate the typical switching behavior of the vanadium oxide-based resistive switching memory with a sudden resistance transition, and the self-saturation of reset current as a function of compliance current is observed in the test, which is attributed to the conducting mechanism is discussed in detail. growth pattern of the conducting filaments. Additionally, the related

关 键 词：resistive switching vanadium oxide conducting filament magnetron sputtering 

分 类 号：TN304.055[电子电信—物理电子学]