Improved interface properties of an HfO_2 gate dielectric GaAs MOS device by using SiN_x as an interfacial passivation layer  

作　　者：朱述炎 徐静平 汪礼胜 黄苑 

机构地区：[1]School of Optical and Electronic Information,Huazhong University of Science and Technology [2]Department of Physics Science and Technology,Wuhan University of Technology

出　　处：《Chinese Physics B》2013年第9期564-567,共4页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No. 61176100)

摘　　要：A GaAs metal-oxide-semiconductor （MOS） capacitor with HfO2 as gate dielectric and silicon nitride （SiNx） as the interlayer （IL） is fabricated. Experimental results show that the sample with the SiNx IL has an improved capacitance- voltage characteristic, lower leakage current density （0.785 × 10^-6 Alcm^2 at Vfo ＋ 1 V） and lower interface-state density （2.9 × 10^12 eV^-1 ·cm^-2） compared with other samples with N2- or NH3-plasma pretreatment. The influences of post- deposition annealing temperature on electrical properties are also investigated for the samples with SiNx IL. The sample annealed at 600 ℃ exhibits better electrical properties than that annealed at 500 ℃, which is attributed to the suppression of native oxides, as confirmed by XPS analyses.A GaAs metal-oxide-semiconductor （MOS） capacitor with HfO2 as gate dielectric and silicon nitride （SiNx） as the interlayer （IL） is fabricated. Experimental results show that the sample with the SiNx IL has an improved capacitance- voltage characteristic, lower leakage current density （0.785 × 10^-6 Alcm^2 at Vfo ＋ 1 V） and lower interface-state density （2.9 × 10^12 eV^-1 ·cm^-2） compared with other samples with N2- or NH3-plasma pretreatment. The influences of post- deposition annealing temperature on electrical properties are also investigated for the samples with SiNx IL. The sample annealed at 600 ℃ exhibits better electrical properties than that annealed at 500 ℃, which is attributed to the suppression of native oxides, as confirmed by XPS analyses.

关 键 词：GaAs metal-oxide-semiconductor （MOS） devices silicon nitride INTERLAYER post-deposition an-nealing 

分 类 号：TN386.1[电子电信—物理电子学] TQ174.758[化学工程—陶瓷工业]