Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer  

作　　者：汤振杰 李荣 殷江 

机构地区：[1]College of Physics and Electronic Engineering,Anyang Normal University [2]School of Mathematics and Statistics,Anyang Normal University [3]Department of Materials Science and Engineering,National Laboratory of Solid State Microstructures,Nanjing University

出　　处：《Chinese Physics B》2013年第9期591-594,共4页中国物理B（英文版）

基　　金：supported by the Science and Technology Research Key Project of Education Department of Henan, China (Grant No. 13A140021);the National Natural Science Foundation of China (Grant Nos. 50972054 and 61176124);the National Basic Research Program of China (Grant No. 2010CB934201);the State Key Program for Science and Technology of China (Grant No. 2009ZX02039-004)

摘　　要：A composition-modulated （HfO2）x（Al2O3）1-x charge trapping layer is proposed for charge trap flash memory by controlling the A1 atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated （HfO2）x（Al2O3）l-x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application.A composition-modulated （HfO2）x（Al2O3）1-x charge trapping layer is proposed for charge trap flash memory by controlling the A1 atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated （HfO2）x（Al2O3）l-x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application.

关 键 词：composition modulated films memory device charge trap atomic layer deposition 

分 类 号：TN761[电子电信—电路与系统]