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机构地区:[1]Department of Material Science and Engineering,Harbin Institute of Technology [2]Department of Astronautics,Harbin Institute of Technology
出 处:《Chinese Physics B》2013年第9期629-633,共5页中国物理B(英文版)
基 金:supported by the National Natural Science Foundation of China (Grant No. 11205038);the China Postdoctoral Science Foundation (Grant No. 2012M510951)
摘 要:The radiation effects on several properties (reference voltage, digital output logic voltage, and supply current) of dual 8-bit analog-to-digital (A/D) converters (AD9058) under various biased conditions are investigated in this paper. Gamma ray and 10-MeV proton irradiation are selected for a detailed evaluation and comparison. Based on the measurement results induced by the gamma ray with various dose rates, the devices exhibit enhanced low dose rate sensitivity (ELDRS) under zero and working bias conditions. Meanwhile, it is obvious that the ELDRS is more severe under the working bias condition than under the zero bias condition. The degradation of AD9058 does not display obvious ELDRS during 10-MeV proton irradiation with the selected flux.The radiation effects on several properties (reference voltage, digital output logic voltage, and supply current) of dual 8-bit analog-to-digital (A/D) converters (AD9058) under various biased conditions are investigated in this paper. Gamma ray and 10-MeV proton irradiation are selected for a detailed evaluation and comparison. Based on the measurement results induced by the gamma ray with various dose rates, the devices exhibit enhanced low dose rate sensitivity (ELDRS) under zero and working bias conditions. Meanwhile, it is obvious that the ELDRS is more severe under the working bias condition than under the zero bias condition. The degradation of AD9058 does not display obvious ELDRS during 10-MeV proton irradiation with the selected flux.
关 键 词:analog-to-digital converters enhanced low dose rate sensitivities (ELDRS) gamma ray and protonirradiation lower/high-dose rate
分 类 号:TN792[电子电信—电路与系统]
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