SiGe-OI对称脊形定向耦合器的研究  

Research on SiGe-OI Symmetrical Ridge Directional Coupler

作　　者：冯松[1,2] 高勇[1,2] 

机构地区：[1]西安理工大学自动化与信息工程学院,陕西西安710048 [2]西安工程大学理学院,陕西西安710048

出　　处：《西安理工大学学报》2013年第3期314-318,共5页Journal of Xi'an University of Technology

基　　金：国家自然科学基金资助项目(61204080);陕西省教育厅科研计划资助项目(2013JK1111);西安工程大学博士科研启动基金资助项目(BS1128)

摘　　要：基于SiGe-OI新型半导体材料,分析了SiGe-OI对称脊形定向耦合器的横向和纵向耦合理论,在BPM模拟软件平台上,建立了SiGe-OI对称脊形定向耦合器结构,分别模拟了其完全耦合和3 dB耦合的光场传输特性,给出了脊形宽度、耦合间距、光波波长和Ge含量对耦合长度的影响;重点分析了耦合系数、脊形宽度、耦合长度、耦合间距、光波波长以及Ge含量等物理量之间的关系,得出了为了便于光电集成,可以在本文模拟的参数值范围内,选择较大的脊形宽度和较小的耦合间距和Ge含量的结论,为SiGe-OI对称脊形定向耦合器的研制提供了技术参考。In this paper, based on new SiGe-OI semiconductor materials, vertical and horizontal coupling theory of SiGe-OI symmetrical ridge directional coupler are analyzed. The structure of SiGe-OI symmetri- cal ridge directional coupler is built by BPM simulation software. Full coupling and 3dB coupling of cou- pler are respectively simulated, and ridge width, coupling gap, wavelength and the effects of Ge contents upon coupling length are given out. The main relationship among coupling coefficient, ridge width, cou- pling length, coupling gap, wavelength and Ge contents are analyzed in priority. With the range of simu- lation parameter values in this paper, larger ridge width, small coupling gap and small Ge contents are better for optoelectronic integration in conclusion, and this research provides a technical reference for the manufacturing of SiGe-OI symmetrical ridge directional coupler.

关 键 词：绝缘层上锗硅 定向耦合器 耦合长度 耦合间距 

分 类 号：TN252[电子电信—物理电子学]