用于空间太阳能电站的新型高效半导体功率器件可靠性研究  

Dependability Research on High Effective Semiconductor of Power Device for Space Solar Power Station

作　　者：王颖[1] 董士伟[1] 

机构地区：[1]中国空间技术研究院西安分院空间微波技术实验室,西安710000

出　　处：《空间电子技术》2013年第3期39-42,共4页Space Electronic Technology

摘　　要：文章重点围绕GaN基HEMT器件的辐照效应和高场退化效应进行论述,立足于空间用GaN基HEMT器件技术发展需求,着眼于空间用GaN基HEMT器件的可靠性研究进展,从理论上分析材料和器件参数变化的原因,提出星载GaN基HEMT器件的高可靠性、长寿命控制手段。The radiation damage and high-electric-field degradation in GaN-based high electron mobility transistors （HEMTs） are diseussed in this paper. For the sake of making progress in GaN-based HEMT technology and reliability research, the cause of material and device parameters changes are found. And the control methods of high dependability, long life GaN-based HEMT are presented.

关 键 词：太阳能电站 半导体 功率器件 可靠性 

分 类 号：TN65[电子电信—电路与系统]