用于n/γ混合场测量的涂硼电离室研制  

Development of Boron-lined Ionization Chamber Used in n/γ Mixed Field

作　　者：朱立[1] 魏志勇[1] 陈国云[2] 雷升杰[1] 方美华[1] 贾文宝[1] 张紫霞[1] 府宇[1] 

机构地区：[1]南京航空航天大学,江苏南京210016 [2]南昌大学物理系,江西南昌330031

出　　处：《原子能科学技术》2013年第9期1624-1628,共5页Atomic Energy Science and Technology

摘　　要：研制了一种能同时测量混合场中γ和中子注量率的涂硼电离室,并实验测试了其性能。涂硼电离室由两个大小和结构一致的腔室组成:1个仅对γ灵敏,另1个对γ与中子均灵敏。用强度为2.7×107 s-1的Am-Be源测得电离室的中子灵敏度达9.2×10-16 A/(cm-2·s-1),在剂量率为5.24μGy/h的137 Csγ场中,电离室的γ灵敏度达7.36×10-16 A/(MeV·cm-2·s-1)。涂硼电离室I-V曲线坪长为600V,坪斜小于4%/100V,在工作电压为-400V时,其γ补偿修正系数<5%,可用于核设施周围的混合场监测。A boron-lined ionization chamber used in n/γ mixed field with better performance was developed. The boron-lined ionization chamber consists of two cavity rooms with the same size. One is for γ, the other is for both γ and neutron. The neutron sensitivity reaches a level of 9.2× 10 -16 A/（cm 2 , s 1） with a calibrated Am- Be neutron source with neutron intensity estimated to be 2.7 × 107 s-1, and the γ sensitivity reaches a level of 7.36×10 16 A/（MeV · cm 2 · s -1） with a calibrated 137Cs source with 5.24 μGy/h dose rate. The plateau length is 600 V and the slope is less than 4%/100 V. An average γ compensation coefficient is less than 5% at work voltage of -400 V, which can be used to monitor the n/γ mixed field around reactors.

关 键 词：涂硼电离室 中子灵敏度 Ⅰ-Ⅴ曲线 混合场 

分 类 号：TL816.3[核科学技术—核技术及应用]