超低压ITO基壳聚糖电解质纸张薄膜晶体管的制备  

Preparation of Ultralow-voltage Indium-tin-oxide Paper Thin Film Transistors Based on Chitosan Electrolyte

作　　者：刘欣[1] 赵娟[1] 赵孔胜[1] 刘全慧[1] 

机构地区：[1]湖南大学物理与微电子科学学院,长沙410082

出　　处：《材料导报》2013年第18期9-11,27,共4页Materials Reports

基　　金：国家自然科学基金(11175063);国家重点基础研究发展计划(973计划)(2007CB310500)

摘　　要：采用一步掩膜法通过射频磁控溅射设备同时制备源极、漏极以及沟道层,采用具有双电荷层效应的壳聚糖薄膜为栅介质,成功制备出以纸张为衬底的超低压薄膜晶体管。这种柔性衬底薄膜晶体管具有良好的电学性能:超低的工作电压(仅为0.8V),场效应迁移率达到8.1cm2/(V·s),亚阈值斜率为80mV/decade,开关电流比高达1.2×107。The ITO source/drain electrodes and channel layer were fabricated on paper by one shadow mask process via RF magnetron sputtering deposition at room temperature.The chitosan film with electric double layer effect as gate dielectric were perpared.These flexible TFTs exhibit good performance with ultralow operation voltage of 0.8 V,a field-effect mobility of 8.1cm2/（V · s）,a subthreshold swing of 80 mV/decade and a large on-off ratio of 1.2×107.

关 键 词：纸张薄膜晶体管 超低压 ITO 壳聚糖 双电层效应 

分 类 号：O469[理学—凝聚态物理]