MgTiO_3基微波介质陶瓷的掺杂改性及低温烧结技术  

Doping Modification and Low-temperature Sintering Technique of MgTiO_3-based Microwave Dielectric Ceramics

作　　者：骆春媛 刘敬肖[1] 史非[1] 吴继伟 钱超[1] 杜鹏程[1] 

机构地区：[1]大连工业大学纺织与材料工程学院,大连116034 [2]大连达利凯普科技有限公司,大连116600

出　　处：《材料导报》2013年第19期140-145,共6页Materials Reports

基　　金：教育部留学回国人员科研启动基金(20111139)

摘　　要：阐述了MgTiO3基微波介质陶瓷材料掺杂改性的基本原则,系统介绍了τf补偿剂和低温烧结助剂的选用规律,总结概括了制备MgTiO3基微波介质陶瓷材料常用的添加剂的种类及其对材料性能的影响;重点评述了近年来MgTiO3基微波介质陶瓷材料掺杂改性的研究进展,并对目前MgTiO3基微波介质陶瓷存在的问题和今后研究发展趋势进行了展望。Basic principles of doping ded. The selection rules of τf compensators modification of MgTiO3-hased microwave dielectric ceramics are expoun- and low-temperature sintering additives are systematically introduced, and the additives used in MgTiO3-based microwave dielectric ceramics and their influences on the properties of materials are summarized. The present research progress of doping modification and low-temperature sintering techniques for MgTiO3-based microwave dielectric ceramics are emphatically reviewed. Moreover, existing problems and future research trends of MgTiO3-based microwave dielectric ceramics are prospected.

关 键 词：MGTIO3 微波介质陶瓷 掺杂改性 低温烧结 

分 类 号：TQ174[化学工程—陶瓷工业]