Numerical Simulation of Particle Densities Distributions in Atmospheric Pressure Ar/SiH4/H2 Mixed Plasma Under Very High Frequency Excitation  

作　　者：ZHUANG Juan SANG Chaofeng WU Mengxue WANG Dezhen 

机构地区：[1]School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116030, China

出　　处：《高电压技术》2013年第9期2228-2234,共7页High Voltage Engineering

基　　金：Project supported by Liaoning Provincial Natural Science Foundation of China （201202037）.

摘　　要：To improve the microcrystalline silicon thin film deposition in quality and to increase its microcrystalline silicon content,we numerically investigated the characteristics of homogeneous discharges in hydrogen diluted silane and argon mixed gases at atmospheric pressure using a two-dimensional fluid model.The model takes into account the primary processes of excitation and ionization,sixteen reactions of radicals with radicals in silane/hydrogen/argon discharges,so this model can adequately describe the discharge plasma.The effects of very high frequency(VHF)excitation on the electron density in such discharges are analyzed.The simulation results show that the electron density does not linearly vary with the excitation frequency within from 90150 MHz.he maximum value occurs at an appropriate excitation frequency i.e.the transition frequency.Increasof the excitation frequency would effectively increase the electron density before the transition frequency,but decreases the density afterwards.is.Moreover,the densities of involved particle species,including H2+,H,Ar*,Ar+,SiH3+,SiH3,SiH3,SiH2are closely interrelated.To improve the microcrystalline silicon thin film deposition in quality and to increase its microcrystalline silicon content, we numerically investigated the characteristics of homogeneous discharges in hydrogen diluted silane and argon mixed gases at atmospheric pressure are numerically investigated using a two-dimensional fluid model. The model takes into account the primary processes of excita- tion and ionization, sixteen reactions of radicals with radicals in silane/hydrogen/argon discharges are taken into account, so this model can adequately describe the discharge plasma. The effects of very high frequency （VHF） excitation on the electron density in such discharges are analyzed using the model. The simulation results show that the electron density does not linearly vary with the excitation frequency in- crease within from 90 MHz to 150 MHz. The maximum value electron density occurs at an appropriate excitation frequency i.e. called the transition frequency. Increase of the excitation frequency would effectively increase the electron density before the transition frequency, but decreases the density afterwards. The electron density is very important for the film growth. Moreover, the densities of involved particle species, including （I-I2＋, H, Ar＊, Ar＋, Sill3＋, Sill3-, Sill3, Sill2） are closely interrelated.

关 键 词：放电等离子体 激励频率 数值模拟 大气压力 密度分布 混合气体 激发 粒子 

分 类 号：O413.1[理学—理论物理] X703[理学—物理]