任意辐射强度与温度下硅光伏电池模型参数的计算方法  

EXTRACTION OF SOLAR CELL MODEL PARAMETERS UNDER ARBITARY IRRADIANCE AND CELL TEMPERATURE

作　　者：邱纯[1] 蔡涛[1] 段善旭[1] 代倩[1] 申彦波[2] 陈正洪[3] 

机构地区：[1]华中科技大学电气与电子工程学院,强电磁工程与新技术国家重点实验室,武汉430074 [2]中国气象局公共气象服务中心,北京100081 [3]湖北省气象科技服务中心,武汉430074

出　　处：《太阳能学报》2013年第9期1626-1632,共7页Acta Energiae Solaris Sinica

基　　金：公益性行业(气象)科研专项(GYHY201006036);国家重点基础研究发展(973)计划(2010CB227206);中央高校基本科研业务费专项资金(HUST2010MS102)

摘　　要：以硅光伏电池的单二极管等效电路模型为基础并引入半经验参数,推导模型参数的计算方法以及辐射强度与温度对模型参数的影响。该方法仅使用标准测试条件下的电气参数便可计算任意状况下的I-V特性曲线。仿真与实验结果表明该模型对于I-V曲线的预测误差在标准测试条件下小于2%,其他工作状况下小于5%。An iterative method was implied to extract the solar cell parameters of the single-diode equivalent circuit, using only four electrical parameters （the open-circuit voltage, short-circuit current and voltage and current at maximum power point） provided by the manufacturer and a semi-empirical parameter. The influence of the irradiance and cell temperature on the model parameters was taken into account which makes the model adaptable to irradiance and temperature conditions other than STC （Standard Testing Conditions）. A simulation program was built to evaluate the proposed model. The comparison of the experimental curves and simulation curves showed good reliability and accuracy of the proposed model. The MAPE （mean absolute percentage error） of 5 points of interest is less than 2% at STC, and less than 5% at other conditions.

关 键 词：硅光伏电池 数学模型 参数提取 数值迭代 I-V特性 

分 类 号：TK514[动力工程及工程热物理—热能工程]