一种新的吸收边界条件及三维微波结构的FDTD  

Analysis of 3D MICs by Using FDTD with New Absorbing Boundary Condition

作　　者：邵振海[1] 洪伟[1] 

机构地区：[1]东南大学无线电工程系毫米波国家重点实验室,南京210096

出　　处：《微波学报》2000年第4期361-365,372,共6页Journal of Microwaves

摘　　要：本文基于 Z-变换域上导出的一种新的有效的吸收边界条件和 FDTD法对三维微波无源集成结构进行了全波分析。与 Mur吸收边界条件、色散吸收边界条件等相比 ,这种新的吸收边界条件更精确有效。相应的软件可应用于复杂三维微波集成结构等效网络参数的精确快速提取。In this paper, a new and effective absorbing boundary condition,derived from Z- transform domain and FDTD method are used to analyze three dimensional microwave passive integrated circuits. The absorbing quality of this new absorbing bounda ry condition is superior to those of the presently used Mur′s boundary conditio n and dispersive boundary condition etc. The software corresponding to this ABC can quickly extract equivalent network parameters of three dimensional complex m icrowave passive integrated circuits.

关 键 词：电磁分析 吸收边界条件 FDTD 三维维波结构 

分 类 号：TN011[电子电信—物理电子学]