介观样品低温热电效应的测量方法  

A METHOD FOR THERMOELECTRIC MEASUREMENTS ON MESOSCOPIC SAMPLES

作　　者：郭帅[1] 吴孝松[1] 

机构地区：[1]北京大学物理学院,介观物理国家重点实验室,北京100871

出　　处：《低温物理学报》2013年第5期327-332,共6页Low Temperature Physical Letters

基　　金：国家自然科学基金(批准号:11074007;11222436);国家重点基础研究发展规划项目(批准号:2012CB933404;2012CB933401)资助的课题~~

摘　　要：近年来,纳米科学技术研究得到了广泛的重视.随着越来越多纳米材料的发现,人们需要能用在纳米尺度的新技术来了解材料的特殊性质.本文,我们介绍了一种测量介观样品热电效应的方法.通过标准光刻过程,我们制作了由一个微型加热器和两个温度计组成的介观结构.这个结构可以建立一个温场,并能测量出样品两端的温差.通过采用2ω方法,我们可以准确地测量出几个mK的温差和相应的热电响应.本文采用此方法测量了300K到10K温度范围内拓扑绝缘体的热电效应.In recent years, intensive research efforts have been paid to nano science and technology. As more and more nanomaterials have been discovered, the need for understanding their properties demands new techniques for characterization of materials in nano scale. Here, we introduce a method for thermoelectric measurements of nano/ mesoscopic samples. By standard lithographic processes, we fabricate a mesoscopic structure, consisting of a miniature heater and two thermometers. The structure allows one to establish and measure a temperature difference between two ends of a mesoscopic sample. We demonstrate that by using a 2w method, a temperature difference of a few mK and the corresponding thermoelectric response can be accurately measured. The method has been employed to measure the thermoelectric effect of a topological insulator from 300 K to 10K.

关 键 词：介观体系 热电势测量 拓扑绝缘体 Bi2Se3 低温 

分 类 号：TB383.1[一般工业技术—材料科学与工程]