与绝对温度成正比BiCMOS集成温度传感器设计  

Design of a BiCMOS Integrated Temperature Sensor Proportional to Absolute Temperature

作　　者：王进军[1,2] 王侠[3] 

机构地区：[1]陕西科技大学电气与信息工程学院,陕西西安710021 [2]西安交通大学电气与信息工程学院,陕西西安710049 [3]西安科技大学电气与控制工程学院,陕西西安710054

出　　处：《压电与声光》2013年第5期749-751,共3页Piezoelectrics & Acoustooptics

基　　金：2010陕西科技大学校级自选科研基金资助项目(ZX10-28)

摘　　要：利用工作在弱反型区MOS管饱和漏电流的指数特性,设计了一款与绝对温度成正比(PTAT)BiCMOS集成温度传感器,主要电路由PTAT电流产生电路、启动电路和输出电路3部分组成,电路结构简单,体积小。测试结果表明,该温度传感器的精度小于0.5℃,线性度小于0.65%,灵敏度为2.5μA/℃,芯片面积为150μm×75μm,具有线性度及灵敏度高的优点,可广泛应于各类便携式电子产品中。proportional to absolute temperature （PTAT） BiCMOS integrated temperature sensor was designed by applying the index characteristics of a MOSFET transistor saturated drain current, which worked on weak inver- sion region. The main circuit was composed by three parts, which were PTAT current generating circuit, start-up circuit and output circuit. The circuit had the advantages of simple structure and small volume. The tested results indicated that the accuracy of the integrated temperature sensor was within 0.5℃, the linearity was within 0.65 % , the sensitivity was 2.5 μA/℃ and the area of the chip was 150 m×75 m The integrated temperature sensor had higher linearity and sensitivity which could be widely applied to various kinds of portable electronic products.

关 键 词：集成温度传感器 绝对温度成正比 BICMOS 

分 类 号：TN433[电子电信—微电子学与固体电子学]