BBO晶体腔内位置对灯泵Cr:LiSAF激光器腔内倍频的影响的研究  

The Research of the Location Effecting of BBO Crystal on the Output Energy of an Intracavity Frequency-doubled Flashlamp-pumped Cr:LiSAF Laser

作　　者：陈长水[1] 赵柯 王佩琳 谢建平[2] 

机构地区：[1]中国科学院安徽光学精密机械研究所,合肥230031 [2]中国科技大学物理系,合肥230026

出　　处：《量子电子学报》2000年第6期521-524,共4页Chinese Journal of Quantum Electronics

摘　　要：本文实验研究了由于色散引起的ＢＢＯ晶体腔内位置对灯泵Ｃｒ：ＬｉＳＡＦ激光器腔内倍频输出的影响，并从理论上获得了腔内倍频的ＢＢＯ晶体的最佳位置为基波与谐波的位相差２π的整数倍，同时，考虑到容许的基波与谐波的位相差为±π／４时，对应基波和谐波波长分别为：９００ ｎｍ和 ４５０ ｎｍ处，腔内倍频的ＢＢＯ晶体的位置调整范围为 ９．４ ｍｍ．The location of BBO crystal in the cavity effecting the output energy in the intracavity frequency-doubling of a flashlamp-pumped Cr:LiSAF laser is researched. The benefit net phase shift due to dispersion between the fundamental and the harmonic wave beam in the air path between BBO crystal and the mirror M3 is a multiple of 2π. If the net phase shift of π/4 is allowed, this requires a BBO crystal movement of no more than 9.4 mm at the fundamental wave of 900 nm and the harmonic wave of 450 nm.

关 键 词：CR:LISAF激光器 腔内倍频 BBO晶体 灯泵 

分 类 号：TN248[电子电信—物理电子学]