基于电磁驱动及磁电/电容检测的硅谐振式双轴角速率传感器设计和测试(英文)  

Design and Test of Dual Axis Silicon Resonant Angular Rate Sensor Using Electromagnetic Excitation and Electromagnetic/Capacitive Detection

作　　者：罗彪 Esashi Masayoshi Ikeue Naokatsu Tanaka Shuji Ono Takahito 吴英 

机构地区：[1]日本东北大学工学部

出　　处：《纳米技术与精密工程》2013年第5期430-435,共6页Nanotechnology and Precision Engineering

摘　　要：本文介绍了一种MEMS角速率传感器的设计、制作和测试.该传感器采用硅梁作为支撑和震动的结构.电磁力在驱动模式中被用来激励质量块做往复运动.驱动模式的频率被设计为5 955.38 Hz.针对另外两个轴向的角速率检测,设计检测模式的频率分别为6 151.01 Hz和6 591 Hz.质量块在驱动模式下的最大位移被设计为20μm.在器件的制作过程中使用了湿法刻蚀、电子束蒸发、阳极键合、等离子体增强化学气相沉淀(PECVD)、lift-off、感应耦合等离子体活性离子蚀刻(ICP-RIE)等MEMS工艺.质量块的尺寸是1 440μm×1 400μm×33.6μm,硅梁的设计尺寸分别为10μm×562.5μm×33.6μm,10μm×532.5μm×33.6μm,芯片的外形尺寸是3 127μm×3 069μm.为了进行器件测试,搭建了真空测试平台.测试结果表明,驱动模式下器件的谐响应频率为9 609 Hz,使用磁电检测的模式其谐响应频率为9 605 Hz.器件中电容检测需要特殊的电路,该电路目前正在搭建中.分析发现实测结果与模拟仿真结果的差异在于加工过程中产生的误差.In this paper, a micro electro mechanical systems （MEMS） angular rate sensor is designed, fabricated and tested. Silicon bars are used for supporting and vibrating structures. Electromagnetic force is used to create reciprocating movement in the driving mode. The designed frequency of driving mode is 5 955.38 Hz. For the angular rate detection of another two axises, the designed detection mode frequen- cies are 6 151.01 Hz and 6 591 Hz, respectively. The maximum displacement of the mass in driving mode is 20 ~m. Wet etching, electron beam （EB） evaporation, anodic bonding, plasma enhanced chemical vapor deposition （PECVD）, lift-off and inductive coupled plasma reactive ion etching （ICP- RIE） are used for device fabrication. The size of the mass is 1 440 μm ×1 400 μm × 33. 6μm. And the parameters of the silicon bars are 10μm ×562.5 μm × 33.6 μm and 10 μm × 532.5 μm x 33.6 μm, re- spectively. The size of chip is 3 127μm × 3 069 μm. For device testing, the vacuuming test equipment is set up. The test result shows that the resonant frequency for driving mode is 9 609 Hz, and that for electromagnetic detection mode is 9 605 Hz. The capacitive detection needs the special circuit, and the experiment is carried on. The reason for the resonant frequency difference between device testing and simulation is the error between design and fabrication process.

关 键 词：角速率传感器 电磁 电容检测 MEMS制作 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]