微光像传感器技术的最新进展  

New Development of Low Light Level Imaging Sensor Technology

作　　者：田金生 

机构地区：[1]云南光学仪器厂,云南昆明650114

出　　处：《红外技术》2013年第9期527-534,共8页Infrared Technology

摘　　要：在回顾微光像传感器的发展历程、现状和跟踪最近10年的发展轨迹的基础上,提出了确定新一代微光像传感器的原则和发展方向。并重点介绍了微光像传感器的最新进展。包括带前置增强级的CCD/CMOS,如增强CCD/CMOS、电子轰击CCD/COMS,固体微光CCD/CMOS、CCD和CMOS混合微光像传感器、电子倍增CCD,铟镓砷短波红外微光像传感器。Based on the review of the development course, status of LLL image sensor, and tracking the development path of LLL image sensor in the near 10 years, this paper proposes the determination principle of a new generation of LLL image sensor and development direction. It also focuses on the latest progress of LLL image sensor including the CCD/CMOS with pre-intensified stage, such as the ICCD/CMOS and the EBCCD/COMS, solid-state LLL CCD/CMOS image sensor, CCD/CMOS hybrid image sensor, EMCCD, and InGaAs short wave infrared image sensor.

关 键 词：微光夜视 像增强器 像传感器 LLLCCD/CMOS CCD和CMOS混合 EMCCD ICCD/CMOS EBCCD EBAPS InGaAs0 

分 类 号：TN223[电子电信—物理电子学]