电致荧光成像表征串联电阻分布  

Series Resistance Imaging Using Electroluminescence

作　　者：叶舟[1] 韩培德[1] 邢宇鹏[1] 梁鹏[1] 范玉洁[1] 胡少旭[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《现代科学仪器》2013年第4期126-128,共3页Modern Scientific Instruments

基　　金：973项目(No.2012CB934204);国家自然基金(No.61275040;60976046;60837001;61021003)资助

摘　　要：本文介绍了一种利用电致荧光成像表征太阳能电池串联电阻分布的方法。太阳能电池的电致荧光强度Фi与外加电压U呈现指数关系,而U-n·(1+Rsi/Rpi)·UT·ln(Фi)和Фi呈现直线关系,其斜率与串联电阻值相关,我们通过拟合二者的直线关系和一些计算得到了串联电阻的分布,我们在一片单晶硅电池上测试并拟合,证实了这种方法的可靠性,此外,我们的拟合结果中还包含了复合分布以及漏电分布。We introduce a new method to determining the distribution of local series resistance of monocrystalline solar cells with electroluminescence.The local electroluminescence emissioni increases exponentially with appplied voltage U,while the relationship between Фi and U-n·（1＋Rsi/Rpi）·UT·ln（Фi） is linear in which the slope is related to local series resistance.By fitting this linear relationship and doing some calculation,series resistance could be determined spatially.This method is verified on a monocrystalline silicon solar cell,in addition,the result of fitting contains the distribution of recombination and shunt.

关 键 词：电致荧光 串联电阻 外加偏压 

分 类 号：TP391.41[自动化与计算机技术—计算机应用技术]