低阻单晶硅的太赫兹时域光谱分析  

Analysis of Monocrystal Silicon with Low Resistivity Using Terahertz Time Domain Spectroscopy

作　　者：许长虹[1] 宝日玛[1] 赵昆[1] 付成[1] 董晨[1] 金武军[1] 

机构地区：[1]中国石油大学(北京)理学院,北京102249

出　　处：《现代科学仪器》2013年第4期219-221,共3页Modern Scientific Instruments

基　　金：国家重大科学仪器设备开发专项(2012YQ14005)

摘　　要：本文应用太赫兹时域光谱技术（THz-TDS）研究了N型和P型具有〈100〉和〈111〉不同晶向的单面抛光和双面抛光的低阻（电阻率为1~5Ω·cm）单晶硅在太赫兹波段的光学性质。结果表明,在具有相同晶向和电阻率的不同掺杂类型的单晶硅中P型硅的折射率大于N型硅,并且单面抛光的大于双面抛光。为太赫兹时域光谱技术在单晶硅的掺杂类型和晶向的鉴别方面提供了有效快速的实验方法。The optical properties of series monocrystal silicon with low resistivity（1-5Ω·cm）,different crystal orientation,doping type and polishing degree have been studied in Nitrogen environment at room temperature by terahertz time domain spectroscopy（THz-TDS）.According to the character information included by Terahertz spectrum,the THz refractive index of P silicon is higher than N silicon,and single-side polishing Si is greater than double-side polishing silicon.It showed that THz-TDS technology can act as a valuable tool for identifying and inspecting doping type and crystal orientation of monocrystal silicon.

关 键 词：太赫兹时域光谱 单晶硅 晶型 掺杂类型 折射率 

分 类 号：TN304.12[电子电信—物理电子学] O657.3[理学—分析化学]