0.13μm IC产品MM模式ESD失效机理  

ESD Failure Mechanism of 0. 13 μm IC Product MM Mode

作　　者：吴峰霞 申俊亮 蔡斌 

机构地区：[1]北京南瑞智芯微电子科技有限公司,北京100192

出　　处：《半导体技术》2013年第10期786-791,共6页Semiconductor Technology

摘　　要：对静电放电(ESD)测试所得到的失效样品进行了物理失效分析,采用塑封体背面研磨、光发射显微镜(EMMI)从背面抓取热点的方法进行异常现象定位,通过剥层技术查找发生在金属化系统及器件层的各种缺陷,定位发生ESD失效的具体位置,进一步研究ESD失效机理。结果表明:0.13μm硅工艺IC产品芯片ESD失效可发生在任一输入/输出(I/O)管脚与地/电源之间;失效模式主要为金属熔融、介质击穿和MOS管过流烧毁;失效原因为静电压导致I/O与地(GND)之间的ESD保护电路NMOS管漏端击穿烧毁引起大电流,造成金属局部发热达到Al的熔点发生熔融而致短路,I/O与电源之间的过电压造成GND的焊盘发生电压击穿现象。The failure samples which obtained by the electrostatic discharge （ESD） test were analyzed using the physical failure analysis methods. During the process of analysis, the methods of encapsulation body back grinding and the emission microscope （EMMI） capturing the hot spot from backside were used to locate the abnormal points. Then, the delayer technology was used to search for various defects occurred in metallization system and device layer. Therefore, the specific location damaged by the ESD failure was located and the ESD failure mechanism was further studied. The research results show that ESD failure of the 0. 13 ptm Si process IC product chip can occur between any two pins like input/output （I/O） and ground/power. The failure mode mainly concludes metal melting, dielectric breakdown and MOS tube burned out caused by over-current. The failure cause is that the static voltage leads to the NMOS tube drain terminal breakdown in ESD protection circuit between I/O and ground （GND）, and then large current passes through, creates partial heat until reaching the melting point of aluminum and occurs the metal melting phenomenon which could cause short-circuit, the overvoltage between I/O and the power breakdown around the pad of GND.

关 键 词：静电放电（ESD） ESD保护电路 ESD损伤 失效模式 失效机理 

分 类 号：TN406[电子电信—微电子学与固体电子学]