GaN基光栅外腔半导体激光器研究进展  

Research Progresses of GaN-Based Grating External Cavity Semiconductor Lasers

作　　者：姚真瑜[1] 吕雪芹[2] 张保平 

机构地区：[1]厦门大学物理系,福建厦门361005 [2]厦门大学萨本栋微米纳米科学技术研究院,福建厦门361005 [3]电子工程系,福建厦门361005

出　　处：《微纳电子技术》2013年第10期609-614,622,共7页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(61106044,61274052,61306087);福建省自然科学基金计划资助项目(2013J05096)

摘　　要：介绍了光栅外腔半导体激光器应用外部光栅实现选模和线宽压窄的基本原理,以及Littrow和Littman两种典型外腔结构和主要组成光学元件,讨论了主要性能表征参数包括调谐范围、激射线宽和边模抑制比等,分析了其关于稳定性的主要技术难点。在此基础上,详细综述了GaN基光栅外腔半导体激光器的国内外研究进展,主要集中在线宽、无跳模调谐范围和功率三个性能指标的优化上,特别提及了厦门大学研究小组的工作进展。最后讨论了其在高精度光谱测试、气体探测和大容量全息数据存储中的应用,并且列举了铟原子的光谱测试和NO气体探测。The fundamental principles of mode selection and wide-line narrowing by using the external grating for the grating external cavity semiconductor lasers are introduced, and the two typical external cavity structures of Littrow-type and Littman-type and main optical components are introduced. The main performance characterization parameters, including tuning range, lasing linewidth, side-mode suppression ratio and so on, are discussed. And the main technical difficulties of the stability are analyzed. On this basis, the research progresses both at home and abroad of the GaN-based grating-coupled external cavity semiconductor lasers are reviewed in detail, focusing on the optimization for three performance indexes of the linewidth, mode-hop-free tuning range and power. The research progress of the research group of Xiamen University is also mentioned. Finally, the applications of the GaN-based grating-coupled external cavity semiconductor laser on the high-precision spectral measurement, gas detection and high capacity holographic data storage are discussed, and the indium atom spectrum test and the NO gas detection are listed.

关 键 词：GaN基 光栅外腔半导体激光器 可调谐波长 窄线宽 高精度光谱测试 气体探测 全息数据存储 

分 类 号：TN248.4[电子电信—物理电子学] TN304.23