Novel bandgap-based under-voltage-lockout methods with high reliability  

作　　者：赵永瑞 来新泉 

机构地区：[1]Institute of Electronic CAD,Xidian University [2]Key Laboratory of High-speed Circuit Design and EMC,Ministry of Education,Xidian University

出　　处：《Journal of Semiconductors》2013年第10期128-135,共8页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61106026)

摘　　要：Highly reliable bandgap-based under-voltage-lockout （UVLO） methods are presented in this paper. The proposed under-voltage state to signal conversion methods take full advantages of the high temperature stability characteristics and the enhancement low-voltage protection methods which protect the core circuit from error operation; moreover, a common-source stage amplifier method is introduced to expand the output voltage range. All of these methods are verified in a UVLO circuit fabricated with a 0.5 μm standard BCD process technology. The experimental result shows that the proposed bandgap method exhibits a good temperature coefficient of 20 ppm/℃, which ensures that the UVLO keeps a stable output until the under-voltage state changes. Moreover, at room temperature, the high threshold voltage VTH＋ generated by the UVLO is 12.3 V with maximum drift voltage of ±80 mV, and the low threshold voltage VTH- is 9.5 V with maximum drift voltage of±70 mV. Also, the low voltage protection method used in the circuit brings a high reliability when the supply voltage is very low.Highly reliable bandgap-based under-voltage-lockout （UVLO） methods are presented in this paper. The proposed under-voltage state to signal conversion methods take full advantages of the high temperature stability characteristics and the enhancement low-voltage protection methods which protect the core circuit from error operation; moreover, a common-source stage amplifier method is introduced to expand the output voltage range. All of these methods are verified in a UVLO circuit fabricated with a 0.5 μm standard BCD process technology. The experimental result shows that the proposed bandgap method exhibits a good temperature coefficient of 20 ppm/℃, which ensures that the UVLO keeps a stable output until the under-voltage state changes. Moreover, at room temperature, the high threshold voltage VTH＋ generated by the UVLO is 12.3 V with maximum drift voltage of ±80 mV, and the low threshold voltage VTH- is 9.5 V with maximum drift voltage of±70 mV. Also, the low voltage protection method used in the circuit brings a high reliability when the supply voltage is very low.

关 键 词：UVLO bandgap-comparator high reliability high temperature stability 

分 类 号：TN722[电子电信—电路与系统]