基于Add-drop型微环谐振腔的硅基高速电光调制器设计  

Design of a high-speed silicon electro-optical modulator based on an add-drop micro-ring resonator

作　　者：曹彤彤[1] 张利斌[1] 费永浩[1] 曹严梅[1] 雷勋[1] 陈少武[1] 

机构地区：[1]中国科学院半导体研究所,集成光电子学国家重点实验室,北京100083

出　　处：《物理学报》2013年第19期260-265,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60837001,61021003)资助的课题~~

摘　　要：相比于传统的All-pass型微环谐振腔硅基电光调制器,Add-drop型微环谐振腔可提供更多的设计自由度,使调制器在不改变杂质掺杂浓度的情况下就能在调制带宽和消光比性能上获得均衡考虑.本文设计了基于Add-drop型微环谐振腔的高速、且在低调制电压下实现大消光比的硅基电光调制器,所用微环谐振腔的半径仅仅为20μm.重点分析了直波导与微环谐振腔的耦合对调制器性能的影响,发现较小的Drop端耦合系数有利于消光比的提高,但是不能同时达到最佳的调制带宽,因此设计上存在一个带宽和消光比性能上的折中考虑.根据优化设计的结果进行了实际器件的制作和测试.静态光谱测试表明,在3 V反向偏置电压的作用下,调制器的消光比最大可达12 dB.动态电光响应测试中,在仅仅1.2 V的信号幅值电压下测得了8 Gbps数据传输速率的清晰眼图.Silicon electro-optical modulators based on add-drop micro-ring resonators have the advantage of more freedom in designing high-extinction-ratio and large-bandwidth modulators without changing the ion doping processes of the chip. Here we design a high-speed silicon modulator based on an add-drop micro-ring resonator with a radius of 20 μm; it demonstrates high extinction ratio with low reverse bias. How the coupling between the straight waveguide and the ring resonator affects the performances is studied theoretically and it is found that a lower coupling coefficient at drop port leads to a higher extinction ratio but not the best bandwidth. Therefore, a balance should be considered between extinction ratio and bandwidth. According to the optimized result of the parameters the device is fabricated and tested. The spectrum testing indicates that the device can have 12 dB extinction ratio when it is operated at 3 V reverse bias. Furthermore, we have observed 8 Gbps open-eye diagram with only 1.2 V peak-to-peak signal voltage.

关 键 词：电光调制器 绝缘体上的硅 微环谐振腔 载流子色散效应 

分 类 号：TN15[电子电信—物理电子学] TN761