ZnS修饰对ZnO纳米棒:P3HT复合薄膜I-V性质的影响  

Influence of ZnS modification on the I-V performance of ZnO nanorods:P3HT composite films

作　　者：王丽师[1,2] 徐建萍[2] 石少波[3] 张晓松[2] 任志瑞[1,2] 葛林[2] 李岚[2] 

机构地区：[1]天津理工大学电子信息工程学院,天津300384 [2]天津理工大学材料物理研究所,天津300384 [3]天津职业技术师范大学理学院,天津300222

出　　处：《物理学报》2013年第19期369-374,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60977035;10904109;60907021);天津市自然科学基金(批准号:11JCYBJC00300)资助的课题~~

摘　　要：本文通过化学浴沉积法获得了直径约为50 nm,长度约为250 nm的ZnO纳米棒阵列,引入纳米ZnS对ZnO纳米棒进行表面修饰,分别制备得到了具有ITO(indium tin oxides)/ZnO/Poly-(3-hexylthiophene)(P3HT)/Au和ITO/ZnO@ZnS/P3HT/Au结构的多层器件.通过I-V曲线对比讨论了两种结构器件的开启电压,串联电阻,反向漏电流及整流比等参数,认为包含ZnS修饰层器件的开启电压、串联电阻、反向漏电流明显降低,整流比显著增强,展现出更优异的电子传输性能.光致发光光谱分析结果证实由于ZnS使ZnO纳米棒的表面缺陷产生的非辐射复合被明显抑制,弱化了电场激发下的载流子陷获,改善了器件的导电特性.In this paper, the ZnO nanorod arrays （NRAs） with a diameter of 50nm and a length of 250 nm were synthesized by chemi-cal bath deposition method. Two devices with structures of ITO （indium tin oxides）/ZnO/poly-（3-hexylthiophene） （P3HT）/Au and ITO/ZnO@ZnS/P3HT/Au were fabricated and their performances were tested and evaluated separately. The I-V curves were mea-sured for discussion of the threshold voltage, series resistance, reverse leakage current, and rectification ratio. Results show that the device with modified ZnO shows a decline in the threshold voltage, series resistance and reverse leakage current, but has an enhanced rectification ratio. The effect of ZnS coating on the improvement of conductive properties of the device could be attributed to the suppression of the non-radiative recombination of surface defects as shown by means of photoluminescence spectrum.

关 键 词：ZNO纳米棒阵列 表面修饰 电流 电压特性 

分 类 号：TB383.1[一般工业技术—材料科学与工程] O484.4[理学—固体物理]